Uniform and high-quality submicrometer tubes of GaS layered crystals

摘要

GaS, group Ⅲ-Ⅵ semiconductor compound, is known to possess a layered structure. In this letter, uniform and high-quality GaS submicrometer tubes have been synthesized via a simple high-temperature thermal reaction route. Each GaS tube is uniform in size, and has length up to tens of microns and outer diameter of ～200-900 nm; some of the tubes are partially filled with liquid metallic Ga "rods." Photoluminescence spectrum reveals that the GaS tubes have two strong emission bands centered at ～585 and ～615 nm. Possible reaction processes and a rolling-up growth mechanism of as-grown GaS tubes were briefly discussed.