Deep level emission from high-power diode laser bars detected by multispectral infrared imaging

摘要

Broadband imaging thermography is applied to investigate the infrared (IR) emission from high-power diode laser bars. We demonstrate the capabilities of a multispectral imaging system that operates in two optical channels, the near IR at 1.5-2 μm and the mid IR at 2.4-5.5 μm. In the near-IR region, deep level luminescence of the device contributes significantly to the thermo-images. A complementary measurement of the IR emission spectrum shows a broad defect band with maxima at E_1=0.94 eV and E_2=1.05 eV. Analysis of IR transients in both spectral channels makes a distinction of thermal radiation and deep level emission possible. In the mid IR, thermal radiation dominates, allowing for an analysis of thermal properties of the device with measurement times of fractions of a second only. This makes imaging thermography highly attractive for device screening.