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Large exchange bias and high stability of CoFe/CrPt films with L1_0 CrPt as the pinning layer

机译:以L1_0 CrPt为钉扎层的CoFe / CrPt膜的大交换偏压和高稳定性

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We have studied an antiferromagnetic L1_0 CrPt film as a pinning layer. dc magnetron sputtered [Pt/Cr] multilayers on a Co_(0.9)Fe_(0.1) layer exhibit no exchange bias. After being annealed at 350℃ for 5 h in a vacuum, the equiatomic [Pt/Cr] multilayer stack is transformed into a uniform CrPt alloy film with L1_0 phase, which pins the adjacent 120 A CoFe layer with a pinning field of ~70 Oe and a coercivity of only 28 Oe. The hysteresis loop of this exchange biased system is almost square and the interdiffusion between the CrPt and the CoFe layers is rather small. The equivalent interface exchange energy ΔE, 0.12 erg/cm~2, is comparable to the typical value of FeMn biasing system. However, the blocking temperature, at which the exchange bias disappears, is as high as 600℃, 150℃ higher than the highest value ever reported. Since it possesses extremely good thermal stability, large exchange bias, little interdiffusion, and high corrosion resistance, the antiferromagnetic CrPt film is proposed to serve as a pinning layer for magnetoresistive devices.
机译:我们已经研究了反铁磁性的L1_0 CrPt薄膜作为固定层。 Co_(0.9)Fe_(0.1)层上的直流磁控溅射[Pt / Cr]多层没有交换偏压。在真空中于350℃退火5 h后,等原子[Pt / Cr]多层堆叠转变为具有L1_0相的均匀CrPt合金膜,该膜将相邻的120 A CoFe层钉扎到〜70 Oe的钉扎场矫顽力仅为28 Oe。该交换偏置系统的磁滞回线几乎是正方形的,并且CrPt和CoFe层之间的相互扩散很小。等效界面交换能ΔE为0.12 erg / cm〜2,与FeMn偏置系统的典型值相当。但是,交换偏置消失的阻断温度高达600℃,比有报道的最高值高150℃。由于其具有极好的热稳定性,大的交换偏压,很少的相互扩散和高的耐腐蚀性,因此建议将反铁磁CrPt膜用作磁阻器件的固定层。

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