Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect

摘要

Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports a simple model based on a surface donor level lying above the conduction-band minimum. The observations of the quantized Hall resistance and zero longitudinal resistivity demonstrate the perfect two dimensionality of the surface electron system. We also observed the Rashba effect due to the strong asymmetry of the confining potential well.