Screening of external electric field by photoinduced carriers in Bragg multiple quantum wells

摘要

We study screening of external bias in a multiple-quantum-well structure by optically injected excess carriers. By solving self-consistently the Poisson equation and the equations for the electron and hole densities, we analyze how realization of different screening regimes depends on the applied bias, excitation power, temperature, and the parameters of the structure. Our calculations show the feasibility of using the proposed setup as an optically controlled electric switch in photonic circuits.