Spin transfer in antisymmetric exchange-biased spin-valves

摘要

In this letter, we report on measurements of current-induced magnetization switching (CIMS) in current-perpendicular-to-plane exchange-biased spin-valves (ESPVs). The structures of the ESPVs are all "antisymmetric," but with different thickness of a ruthenium (Ru) layer. It is confirmed that the "antisymmetric" structures largely enhance the spin transfer effect and therefore reduce critical current densities for the CIMS. The effect of the Ru layer on the spin transfer in the ESPVs is also systematically studied. With a decrease of the Ru layer's thickness, the critical current densities can be further reduced. The lowest critical current we achieved in an "antisymmetric" structure is 1 X 10~6 A/cm_2, which realizes a reduction of more than one order of magnitude compared with all the reported works.