General theory of acceptor-oxygen-vacancy complex single donor in high-dielectric-constant metallic oxide insulators

摘要

Previously, we showed experimentally that Si/O-vacancy complex single donors and C/O-vacancy complex single donors in tantalum oxide films have smaller ionization energies than the first ionization energy of O-vacancy double donors [W. S. Lau, L. L. Leong, T. Han, and N. P. Sandier, Appl. Phys. Lett. 83, 2835 (2003)]. In this letter, a theory based on a larger electron orbit for acceptor O-vacancy complex single donors compared to the O-vacancy double donors is proposed to explain the physics behind our previously reported experimental observation and why Si or C may cause an increase in leakage current in tantalum oxide films.