Lithographically defined metal-semiconductor-hybrid nanoscrolls

摘要

We report on two-layer metal-semiconductor-hybrid scrolls fabricated from rolled-up strained metal/InGaAs-layers. As the central approach, the metallic layer itself acts as a stressor in contact with the semiconductor. Position and length of the scrolls can be precisely tuned by patterning the e-beam-evaporated metallic stressor with conventional lithographic techniques. The thickness of the metallization determines the radius of the resulting scrolls. This fabrication technique significantly improves the reliability and simplifies the fabrication of metal/semiconductor three-dimensional objects which employ bending up layers. Even more important, using this technique the bending radius of such three-dimensional objects can easily be downsized to very small radii in the nanometer scale, e.g. in order to build nano-electro-mechanical systems.