Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

摘要

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than 10~(-9) A/cm~2. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.