Visualization using scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of a metal-SiO_2-Si_3N_4-SiO_2-semiconductor flash memory

摘要

We have used scanning nonlinear dielectric microscopy to clarify the position of electrons and holes in the gate SiO_2-Si_3N_4-SiO_2 (ONO) film of a metal-ONO-semiconductor flash memory. The electrons were detected in the Si_3N_4 part of the ONO film, while the holes were found in the bottom SiO_2 film as well as in the Si_3N_4 film. This suggests that the injected electrons and holes did not always recombine with each other.