Determination at 300 K of the hole capture cross section of chromium-boron pairs in p-type silicon

摘要

Measurement of dissolved chromium concentration in p-type crystalline silicon by means of the change in carrier lifetime due to chromium-boron pair dissociation requires precise knowledge of the recombination parameters of dissolved chromium in silicon. This work, based on quasi-steady-state carrier lifetime measurements, aims to determine the value at 300 K of the hole capture cross section of the chromium-boron pairs in p-type silicon, which is the only recombination parameter still unknown at this temperature. The complete knowledge of the recombination parameters allows the determination of dissolved chromium concentrations in p-type silicon as low as 10~(10) cm~(-3), even when chromium atoms do not dominate carrier recombination.