Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy

摘要

Detailed studies are reported on the photoluminescence of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type Ⅱ. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be in the ratio of 4:6. For a sample with Sb composition ～0.12 in the quantum well the photoluminescence emission band covers the CO_2 absorption peak making it suitable for use in sources for CO_2 detection.