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Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric

机译:具有高介电常数聚合物栅极电介质的低工作电压并五苯场效应晶体管

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Low-operating-voltage organic field-effect transistor has been realized by using the cross-linked cyanoethylated poly(vinyl alcohol) (CR-V) as a gate dielectric. The cross-linked CR-V dielectric was found to have a high dielectric constant of 12.6 and good insulating properties, resulting in a high capacitance (92.9 nF/cm~2 at 20 Hz) for a dielectric thickness of 120 nm. A pentacene field-effect transistor fabricated with the cross-linked CR-V dielectric was found to exhibit a high carrier mobility (0.62 cm~2/V s), a small subthreshold swing (185 mV/decade), and little hysteresis at low operating voltages ( ≤ -3 V).
机译:通过使用交联的氰基乙基化聚(乙烯醇)(CR-V)作为栅极电介质,已经实现了低工作电压有机场效应晶体管。发现交联的CR-V电介质具有12.6的高介电常数和良好的绝缘性能,从而对于120nm的电介质厚度导致高电容(在20Hz下为92.9nF / cm 2)。发现用交联的CR-V电介质制造的并五苯场效应晶体管表现出高的载流子迁移率(0.62 cm〜2 / V s),小的阈值摆幅(185 mV / decade)和低的滞后性工作电压(≤-3 V)。

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