Real-time, in situ, optical reflectance spectroscopy is applied to investigate the kinetics of both random and epitaxial solid-phase crystallization of hydrogenated amorphous silicon annealed between 480 and 620 ℃, with confirmation of key results by electron microscopy. Changes in the visible and near infrared interference fringes monitor H effusion and bulk phase changes, while the ultraviolet reflection peaks monitor the phase! at the film surface. Most H effuses with an activation energy of 1.6 eV before crystal nucleation, and crystallite growth occurs with an activation energy of 3.4 eV. The authors determine the time-temperature-thickness diagram for random crystallization and solid-phase epitaxy.
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