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Annihilation of the OH absorption due to domain inversion in MgO-doped lithium niobate crystals

机译:MgO掺杂的铌酸锂晶体中因畴反转引起的OH吸收灭

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摘要

The influence of domain inversion on the infrared absorption of lithium niobate crystals with varying MgO doping is investigated. The authors observe a significant difference between crystals doped below and those doped above the so-called optical damage threshold. The shift of the OH absorption due to domain inversion for weakly doped or undoped samples, known from the literature, can be confirmed. However, for highly doped samples the peak vanishes completely after forward poling. It reemerges either by reverse poling or by annealing at 250℃. The mechanism is yet not fully understood but has to be correlated with the defect structure of the crystal.
机译:研究了畴反转对MgO掺杂变化对铌酸锂晶体红外吸收的影响。作者观察到低于掺杂的晶体与高于所谓的光学损伤阈值的掺杂晶体之间存在显着差异。从文献已知,可以确认由于弱掺杂或未掺杂样品的畴反转引起的OH吸收的偏移。但是,对于高掺杂样品,峰在正向极化后完全消失。通过反向极化或在250℃退火可以使其再生。该机理尚未完全理解,但必须与晶体的缺陷结构相关。

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