Synthesis and characterization of FeMn-pinned spin valve arrays

摘要

We have prepared by electrodeposition nanoscale spin valves into the pores of anodic alumina membranes. Aligned nanometric spin valve arrays, well characterized by field emission scanning electron microscopy, are vertical with respect to the plane of the template and exhibit a perfect two-dimensional array with a hexagonal pattern. The largest value of room temperature giant magnetoresistance (GMR) we achieved is 6.8% at 75 Oe. The relatively low saturation fields together with relatively large GMR should make such structures attractive for sensor applications.