Laser-induced shock wave stimulated doping of CdTe crystals

摘要

Action of a laser-induced plane shock wave has been considered as the mechanism of doping of CdTe surface region with In. CdTe crystals coated with a relatively thick In film were subjected to irradiation with KrF excimer laser pulses. The In film was not completely evaporated under irradiation and it served further as an electrode in the fabrication of nuclear radiation detectors. Dopant atoms, implicated by laser-induced stress and shock waves, penetrated into CdTe. An In-enriched region was formed and a built-in p-n junction arose at the depth where a stress wave was converted to a shock wave.