Nanoscale n-channel and ambipolar organic field-effect transistors

摘要

N-channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N,N'-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN_2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3 X 10~(-3) cm~2/V s at 5 X 10~5 V/cm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8CN_2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2 X 10~(-3) and 4.0 X 10~(-3) cm~2/V s, respectively, are obtained at 5 X 10~5 V/cm. These results represent the shortest channel length n-channel and ambipolar organic transistors that have been fabricated.