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Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0002) x-ray diffraction peaks

机译:具有非(0002)X射线衍射峰痕迹的溅射c轴AlN薄膜的压电响应性能下降

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摘要

We have observed the apparently anomalous behavior of sputtered AlN thin films that exhibit poor piezoelectric response in spite of having (0002) preferred orientation and narrow rocking curve with full width at half maximum below 2°; however, other AlN films with weak 0002 x-ray diffraction peak and rocking curve as wide as 8° provide a good value of the piezoelectric coefficient d_(31) (2.1 pm/V). The critical difference between both types of films is the presence of traces of non-(0002) reflections in the x-ray diffraction patterns of the former. Non-(0002) reflections may be related to defects (probably, inversion domains) that significantly reduce the net piezoelectric field.
机译:我们已经观察到,尽管具有(0002)较好的取向和较窄的摇摆曲线,且其半峰全宽低于2°,但溅射后的AlN薄膜仍表现出异常的压电响应,该异常行为表现出较差的压电响应。但是,其他具有0002 x射线衍射峰弱且摇摆曲线高达8°的AlN膜则具有很好的压电系数d_(31)(2.1 pm / V)。两种类型的胶片之间的关键区别在于,前者的X射线衍射图中存在非(0002)反射痕迹。非(0002)反射可能与明显减少净压电场的缺陷(可能是反转域)有关。

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  • 来源
    《Applied Physics Letters》 |2006年第16期|p.161915.1-161915.3|共3页
  • 作者单位

    Grupo de Microsistemas y Materiales Electronicos, Departamento de Tecnologia Electronica, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;计量学;
  • 关键词

  • 入库时间 2022-08-18 03:21:58

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