Evidence of the C_(60)/Cu contact formation after thermal treatment

摘要

The origin of the lowered electron injection barrier height of C_(60)/Cu was investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy (XPS). The onset of the highest occupied molecular orbital level was shifted by 0.2 eV toward high binding energy upon the heat treatment, resulting in the improved injection characteristics of the device. Moreover, an unexpected gap state has been observed at 1.2 eV below the Fermi level. The XPS core-level spectra revealed that the chemical reaction between C_(60) and Cu at the interface induced the gap state after heat treatment. The gap state pinned the Fermi level close to the lowest unoccupied molecular orbital of C_(60). We obtained the complete energy level diagram of C_(60)/Cu before and after the heat treatment.