Physical model of CdS-based thin-film photovoltaic junctions

摘要

We propose a simple physical model of CdS-based thin-film photovoltaic junctions including the major types that utilize the CdTe and Cu(In,Ga)Se_2 absorber layers. This model allows for field reversal in the CdS layer. It is solved analytically, verified numerically, and predicts a variety of phenomena, such as the lack of carrier collection from CdS, buffer layer effects, light to dark current-voltage curve crossing and rollover.