Gas diffusion barriers on polymers using Al_2O_3 atomic layer deposition

摘要

Thin films of Al_2O_3 grown by atomic layer deposition (ALD) were investigated as gas diffusion barriers on flexible polyethylene naphthalate and Kapton® polyimide substrates. Al_2O_3 ALD films with thicknesses of 1-26 nm were grown at 100-175℃. For Al_2O_3 ALD films with thicknesses ≥ 5 nm, oxygen transmission rates were below the MOCON instrument test limit of ～5 X 10~(-3) cc/m~2/day. Applying a more sensitive radioactive tracer method, H_2O-vapor transmission rates of ～1 X 10~(-3) g/m~2/day were measured for single-sided Al_2O_3 ALD films with thicknesses of 26 nm on the polymers. Ultrathin gas diffusion barriers grown by Al_2O_3 ALD may enable organic displays and electronics on permeable, flexible polymer substrates.