Photovoltaic response of a polymer p-i-n junction

摘要

We report the photovoltaic characterization of a polymer p-i-n junction, realized by in situ electrochemical doping and thermal cycling. The planar, "frozen" p-i-n junction exhibits record-high open-circuit voltage up to 2.25 V, and in-plane short-circuit current density in excess of 10 mA/cm~2 under simulated sunlight (～300 mW/cm~2). Our results suggest that built-in potential close to the polymer energy gap in magnitude can be obtained in a polymer device structure without the use of dissimilar electrodes, and large short-circuit current density is possible without the use of strong electron acceptors, which limits the open-circuit voltage.