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首页> 外文期刊>Applied Physics Letters >Charge storage in SnO_2 nanoparticles: A method and mechanism for charge writing/erasing
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Charge storage in SnO_2 nanoparticles: A method and mechanism for charge writing/erasing

机译:SnO_2纳米粒子中的电荷存储:电荷写入/擦除的方法和机理

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摘要

In this work, we present and explain evidence of a charge confinement phenomena exhibited by SnO_2 nanoparticles. By applying a voltage pulse from the scanning tunneling microscope (STM) tip or momentarily increasing the gap voltage, charged features can be written on the surface. The voltage dependence of the apparent height of the features, and current imaging tunneling spectroscopy experiments, supports the charge confinement theory put forward. This is substantiated by a numerical model illustrating how charge is confined in individual nanoparticles, and is used to explain the observations of STM experiments.
机译:在这项工作中,我们提出并解释了SnO_2纳米粒子表现出的电荷约束现象的证据。通过施加来自扫描隧道显微镜(STM)尖端的电压脉冲或暂时增加间隙电压,可以将带电特征写入表面。电压依赖表观高度的特征,以及电流成像隧道光谱实验,支持提出的电荷限制理论。这由一个数字模型证实,该模型说明了电荷如何限制在各个纳米颗粒中,并用于解释STM实验的观察结果。

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