Germanium near infrared detector in silicon on insulator

摘要

The authors demonstrate near infrared photodetectors in evaporated germanium on silicon-on-insulator waveguides. The authors achieve peak responsivities as high as 1 A/W and dark current densities as low as 40 nA at a reverse bias of 1 V. Owing to the low deposition temperature, this technology allows for simple and low cost monolithic integration with silicon.