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首页> 外文期刊>Applied Physics Letters >Use of bias sputtering to enhance decoupling in oxide composite perpendicular recording media
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Use of bias sputtering to enhance decoupling in oxide composite perpendicular recording media

机译:使用偏压溅射增强氧化物复合垂直记录介质中的去耦

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摘要

The effects of substrate bias on two types of oxide composite perpendicular recording media CoCrPt-SiO_2 and FePt-MgO were investigated. The use of substrate bias greatly modified the thin film microstructure and resulted in the enhanced grain decoupling in the films. The growth characteristics due to preferential resputtering were interpreted to arise mainly from weak surface bonding to the growing films for nontextured growth, combined with strong cohesion for the textured growth.
机译:研究了衬底偏压对两种类型的氧化物复合垂直记录介质CoCrPt-SiO_2和FePt-MgO的影响。衬底偏压的使用极大地改变了薄膜的微观结构,并导致了薄膜中增强的晶粒解耦。可以认为,由于优先溅射而产生的生长特性主要是由于与无纹理生长的生长膜表面结合力弱,以及对有纹理的生长具有很强的内聚力。

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