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Fabrication and enhanced magnetoresistance of SiO_2-coated Fe_3O_4 nanosphere compact

机译:SiO_2包覆Fe_3O_4纳米球复合材料的制备及增强的磁阻

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摘要

Magnetoresistance (MR) of a nanostructured material, monodisperse Fe_3O_4 nanospheres of about 200 nm coated with thin SiO_2 and compactly cold pressed and sintered, has been investigated. A high MR, up to 10.8% at 1 T and 17% at 8 T, has been observed at 100 K. This enhanced MR is likely arising from the spin-polarized tunneling of conducting electrons through the insulating SiO_2 boundaries. The decrease of the MR with the temperature increasing was attributed to the existence of the local spins in the grain boundaries. In addition, the MR ratio decreases with the SiO_2 thickness increasing and sintering temperature decreasing. It suggests that the magnetic property of the insulating barrier is crucial for enhancing the low-field MR at a high temperature.
机译:研究了一种纳米结构材料的磁阻(MR),该材料是约200 nm的单分散Fe_3O_4纳米球,表面包覆有薄SiO_2,并进行了紧凑的冷压和烧结。在100 K时观察到高MR,在1 T时高达10.8%,在8 T时高达17%。这种增强的MR可能是由于导电电子通过绝缘SiO_2边界的自旋极化隧穿引起的。 MR随温度升高而降低是由于晶界中存在局部自旋。另外,随着SiO_2厚度的增加和烧结温度的降低,MR比降低。这表明绝缘势垒的磁性对于在高温下增强低场MR至关重要。

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