Deep levels controlling the electrical properties of Fe-implanted GaInP/GaAs

摘要

The authors investigated the electrical compensation induced by deep levels introduced in metal organic vapor phase epitaxy grown n~+-InGaP/GaAs epitaxial layers by high temperature Fe implantation. The activation of the Fe~(2+)-related deep levels has been assessed by current-voltage analyses performed at different temperatures. In the framework of the space charge limited current model, they determined the energy location in the gap of the deep levels that control the electrical properties of the semi-insulating epilayers. A donor level which acts as an electron trap located at E_C-0.5 eV and a Fe-related acceptor level which is responsible for the stable increase of resistivity located at E_V+0.72 eV were identified.