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Quantum Confinement Effect In Zno Thin Films Grown By Pulsed Laser Deposition

机译:脉冲激光沉积生长Zno薄膜的量子约束效应

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High quality crystalline nanostructured ZnO thin films were fabricated by pulsed laser deposition on (0001) sapphire substrates. The films were investigated by x-ray diffraction, scanning electron microscopy, and optical absorption spectroscopy. The exciton peak energy from absorption spectra was used to determine the band gap energy E_g, which was found to increase systematically with the decrease in the mean grain size and ranged from 3.388 to 3.647 eV. This is consistent with the quantum confinement model and, up until now, not observed in a convincing manner in the ZnO thin films.
机译:通过在(0001)蓝宝石衬底上进行脉冲激光沉积,制备了高质量的晶体纳米结构ZnO薄膜。通过X射线衍射,扫描电子显微镜和光学吸收光谱对膜进行研究。利用吸收光谱中的激子峰值能量确定带隙能量E_g,发现该带隙能量E_g随着平均晶粒尺寸的减小而系统地增加,范围为3.388至3.647 eV。这与量子限制模型是一致的,并且到目前为止,在ZnO薄膜中还没有令人信服的方式被观察到。

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