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Epitaxial nanotwinned Cu films with high strength and high conductivity

机译:高强度高导电率的外延纳米孪晶铜膜

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We report on the synthesis of epitaxial (single-crystal-like), nanotwinned Cu films via magnetron sputtering. Increasing the deposition rate from 1 to 4 nm/s decreased the average twin lamellae spacing from 16 to 7 nm. These epitaxial nanotwinned Cu films exhibit significantly higher ratio of hardness to room temperature electrical resistivity than columnar grain (nanocrystalline), textured, nanotwinned Cu films.
机译:我们报道了通过磁控溅射外延(单晶状),纳米孪晶铜膜的合成。将沉积速率从1 nm / s增加到4 nm / s,将平均双晶层间距从16 nm减少到7 nm。这些外延纳米孪晶铜膜比圆柱状晶粒(纳米晶),纹理化,纳米孪晶铜膜具有更高的硬度与室温电阻率之比。

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