Point contact readout for a quantum dot terahertz sensor

摘要

We introduce a terahertz radiation sensor in which the photon-induced ionization state of a quantum dot is monitored by a point contact formed in the same semiconductor heterostructure. For comparison we used a readout based on a single electron transistor coupled to the same quantum dot. The experiments prove functionality of the point contact-based device with additional practical advantage of a higher operation temperature up to 1.5 K and ease of nanofabrication.