Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

G. Pozina; C. Hemmingsson; P. P. Paskov; J. P. Bergman; B. Monemar; T. Kawashima; H. Amano; I. Akasaki; A. Usui

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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

机译：退火对在GaN衬底上生长的Mg掺杂GaN层中亚稳态浅受体的影响

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Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to

机译：通过金属有机气相外延在卤化物气相技术生产的GaN衬底上生长的Mg掺杂的GaN层证明了近带隙光致发光（PL）的亚稳定性。受主激子（ABE）线可能与

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来源
《Applied Physicsletters》 |2008年第15期|73-75|共3页
作者
G. Pozina; C. Hemmingsson; P. P. Paskov; J. P. Bergman; B. Monemar; T. Kawashima; H. Amano; I. Akasaki; A. Usui;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates [J] . G. Pozina, P. P. Paskov, J. P. Bergman, Applied Physics Letters . 2007,第22期

机译：在准bulk GaN模板上生长的Mg掺杂的GaN层中，UV发光的亚稳态行为
2. Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates [J] . Pozina G, Monemar B, Paskov PP, Physica, B. Condensed Matter . 2007,第0期

机译：MOVPE在准本体GaN模板上生长的Mg掺杂GaN层中UV发光的亚稳态
3. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate [J] . Chichibu S. F., Shima K., Kojima K., Applied Physics Letters . 2018,第21期

机译：在GaN衬底上生长的Mg掺杂的GaN外延层中主要非辐射复合中心的大电子俘获截面
4. Optical Properties Of Metastable Shallow Acceptors In Mg-Doped GaN Layers Grown By Metal-Organic Vapor Phase Epitaxy [C] . G. Pozina, C. Hemmingsson, J.P. Bergman, International Conference on the Physics of Semiconductors . 2009

机译：金属 - 有机气相外延生长的Mg掺杂GaN层中亚料浅层受体的光学性质
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates [O] . Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, 2018

机译：独立式GaN衬底上注入Mg和掺杂Mg的GaN层中缺陷的比较分析
7. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates [O] . Pozina, Galia, Hemmingsson, Carl, Paskov, Plamen P., 2008

机译：退火对在GaN衬底上生长的Mg掺杂GaN层中亚稳态浅受体的影响

Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

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