Control of epitaxy-induced magnetocrystalline anisotropy in a molecular beam epitaxy-grown Co/MgO/Fe/MgO(100) pseudo-spin-valve

摘要

We show that by obtaining a crystalline structure in a Co/MgO/Fe tunnel junction, we are able to control the magnetic anisotropies in the spin valve and therefore, induce independent switching of the two magnetic layers. In situ and ex situ structural characterization confirms that the multilayer is fully epitaxial, with smooth interfaces throughout. In confirmation of the high quality of the insulating barrier, we also present a layer-selective measurement of the magnetization of the top electrode using current-in-plane transport measurements.