Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes

摘要

We report the effect of injection current density on the electroluminescence (EL) from silicon quantum dot (QD) light-emitting diodes. The EL spectra as a function of injection current density were blueshifted and broad. These results are attributed to both the increase in the contribution of small Si QDs in the silicon nitride film due to the increase in the injection current density and the recombination of electron-hole pairs between excited states in the Si QDs due to band bending under high bias.