Improved electroluminescence performance of quantum dot light-emitting diodes: A promising hole injection layer of Fe-doped NiO nanocrystals

摘要

Fe-doped NiO nanocrystals (NCs) were prepared by a simple solvothermal route and applied as a hole injection layer (HIL) in quantum dots light-emitting diodes QLEDs. The transmittance of the film is more than 82%. The resulting devices show pure QD electroluminescent emissions with a maximum EL brightness of 27624 m(-2) after doping 5% mol Fe in NiO, due to the enhanced carrier concentration and conductivity. The external quantum efficiency (EQE), current efficiency (CA) and lifetime of the QLED device showed the maximum values of 3.84%, 5.93 cd A(-1) and 11490 h, respectively.