Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation

摘要

The concentration dependence of H diffusion in amorphous Si (a-Si) formed by ion implantation is reported for implanted H profiles. An empirical relationship is proposed which relates the diffusion coefficient to the H concentration valid up to 0.3 at. %. B-enhanced H diffusion is observed and shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is applied to these data.