Low temperature preparation of ferroelectric bismuth titanate thin films

摘要

The low temperature metal organic decomposition techniques of ferroelectric bismuth titanate (BIT) thin films were investigated. BIT was found to be crystallized by rapid thermal processing at 450 ℃. The stoichiometric Bi_4Ti_3O_(12) sample exhibited (117) orientation, while the Bi_(4.8)Ti_3O_(13.2) sample, with 20% excess bismuth, possessed a/b axes orientation with (117) component. Pt/Bi_(4.8)Ti_3O_(13.2)/Pt ferroelectric capacitors were fabricated with temperature confined below 450 ℃. The saturated 2P_r value was 31.1 μC/cm~2. Such method is valuable for ferroelectric memories at 65 nm technology node and beyond because low temperature processes are required for the stability of interconnect material nickel silicide.