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Vertical alignment of liquid crystals on a fully oxidized HfO_2 surface by ion bombardment

机译:离子轰击在完全氧化的HfO_2表面上使液晶垂直排列

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摘要

High-performance liquid crystals (LCs) driven at a 0.9 V threshold were demonstrated on very thin HfO_2 films with vertical (homeotropic) alignment by ion bombardment. Atomic layer deposition was used to obtain LC orientation on ultrathin high-quality films of double-layer HfO_2/Al_2O_3. X-ray photoelectron spectroscopy indicated that full oxidization of HfO_2 film surfaces was induced by ion bombardment, shifting the Hf 4f spectra to lower binding energies. The increased intensities of the Hf 4f peaks after ion bombardment confirmed that nonstoichiometric HfO_x was converted to the fully oxidized HfO_2 surfaces.
机译:通过离子轰击在具有垂直(垂直)取向的HfO_2薄膜上证明了以0.9 V阈值驱动的高性能液晶(LC)。原子层沉积用于在双层HfO_2 / Al_2O_3的超薄高质量薄膜上获得LC取向。 X射线光电子能谱表明,HfO_2薄膜表面被离子轰击完全氧化,使Hf 4f光谱移动到较低的结合能。离子轰击后Hf 4f峰强度的增加证实了非化学计量的HfO_x已转化为完全氧化的HfO_2表面。

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  • 来源
    《Applied Physicsletters》 |2009年第22期|259-261|共3页
  • 作者单位

    Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:19:38

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