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Magnetoresistance in high-density two-dimensional electron gas confined in InAIAs/lnGaAs quantum well

机译:InAIAs / InGaAs量子阱中封闭的高密度二维电子气中的磁阻

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摘要

We study the magnetoresistance of a high-density two-dimensional electron gas confined in an InAlAs/InGaAs quantum well and observe a parabolic negative magnetoresistivity at moderate field. This negative magnetoresistivity is induced by electron-electron interactions. The interaction correction to the Drude conductance is extracted from the negative magnetoresistivity. However, due to inhomogeneity in the electron density, there is a contribution of positive magnetoresistivity, which induces the larger extracted correction than anticipated.
机译:我们研究了封闭在InAlAs / InGaAs量子阱中的高密度二维电子气的磁阻,并在中等电场下观察到抛物线形负磁阻。这种负磁阻是由电子-电子相互作用引起的。从负磁阻中提取对Drude电导的相互作用校正。但是,由于电子密度的不均匀性,正磁电阻率有一定的贡献,这会导致提取的校正量比预期的大。

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  • 来源
    《Applied Physicsletters》 |2009年第15期|121-123|共3页
  • 作者单位

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, People's Republic of China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, People's Republic of China;

    Institute for Microstructural Sciences M50, National Research Council of Canada, Montreal Road, Ottawa, Ontario K1A 0R6, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:19:32

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