机译:InAIAs / InGaAs量子阱中封闭的高密度二维电子气中的磁阻
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, People's Republic of China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, People's Republic of China;
Institute for Microstructural Sciences M50, National Research Council of Canada, Montreal Road, Ottawa, Ontario K1A 0R6, Canada;
机译:InAIAs / lnGaAs / lnAIAs二维电子气中的强自旋轨道相互作用的弱反定位分析
机译:使用铟锡氧化物透明栅极技术提高了InAIAs / InGaAs变质高迁移率电子迁移率的光学响应性
机译:亚阈值摆幅为61 mV /十倍并且有效迁移率为11 900 cm〜2 V〜(-1)·s〜(-1)的长通道InAIAs / InGaAs / lnAIAs单量子阱MISFET
机译:在AlGaN / GaN异化蔗种上限制的高密度二维电子系统上的微波辅助运输测量
机译:二维电子被限制在磁性量子阱中。
机译:受限二维电子气中的3/2分数量子霍尔平台
机译:错误到:量子狭窄的insumsum圆点光致发光与Algaas / GaAs二维电子气体的光致发光的温度依赖性