Intradot Dynamics Of Inas Quantum Dot Based Electroabsorbers

摘要

The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.