Achieving high free electron mobility in ZnO:AI thin films grown by reactive pulsed magnetron sputtering

摘要

The study is focused on the improvement of the free electron mobility in Al-doped ZnO films grown by reactive pulsed magnetron sputtering. At optimum growth conditions low-absorbing films are obtained with a Hall mobility of 46 cm~2 V~(-1) s~(-1), a free electron density of 6.0 × 10~(20) cm~(-3), and an electrical resistivity of 2.26 × 10~(-4) Ωcm. The relation between the mobility and free electron density for different growth conditions is discussed in terms of ionized impurity scattering, impurity clustering, and grain boundary limited transport.