Optimum Quantum Well Width For Iii-nitride Nonpolar And Semipolar Laser Diodes

摘要

The advantage of using wider quantum wells in Ⅲ-nitride lasers offered by nonpolar/semipolar technology is limited by narrower valence subband separation, thermal hole redistribution, and resulting optical gain degradation in wider wells. We show that corresponding increase in radiative carrier lifetime in wider quantum wells can lower the laser threshold, thus inferring the existence of an optimum quantum well width for laser design.