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Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

机译：TiN / HfSiON栅堆叠结构的热稳定性用同步辐射辐射光发射光谱法研究

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摘要

We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi_x and HfN_y components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.
机译：我们已经使用同步辐射辐射光发射光谱法研究了TiN / HfSiON栅堆叠结构的热稳定性。 Si 2p核心能级谱中的Si氧化物组分的谱强度随退火温度而系统地增加，这在很大程度上取决于TiN金属栅极层的厚度。退火程序在原子浓度深度分布图中带来的变化表明，SiN原子在TiN表面偏析。此外，通过角度分辨光发射光谱法进行的化学状态分辨深度分析表明，由于TiN膜生长过程中HfSiON层中的化学键断裂，形成了TiSi_x和HfN_y组分。这可能与热稳定性下降有关。

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  • 来源
    《Applied Physics Letters》 |2010年第26期|p.262903.1-262903.3|共3页
  • 作者

    S. Toyoda; H. Kamada; H. Kumigashira; M. Oshima; K. Iwamoto; T. Sukegawa; Z. Liu;

  • 作者单位

    Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan,CREST, Japan Science and Technology Agency, Chiyoda-ku, Tokyo 102-0075, Japan,University-of-Tokyo Synchrotron Radiation Research Organization, Bunkyo-ku, Tokyo 113-8656, Japan;

    rnDepartment of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan;

    rnDepartment of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan,University-of-Tokyo Synchrotron Radiation Research Organization, Bunkyo-ku, Tokyo 113-8656, Japan,PRESTO, Japan Science and Technology Agency, Chiyoda-ku, Tokyo 102-0075, Japan;

    rnDepartment of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan,CREST, Japan Science and Technology Agency, Chiyoda-ku, Tokyo 102-0075, Japan,University-of-Tokyo Synchrotron Radiation Research Organization, Bunkyo-ku, Tokyo 113-8656, Japan;

    rnSemiconductor Technology Academic Research Center, Kohoku-ku, Kanagawa 222-0033, Japan;

    rnPRESTO, Japan Science and Technology Agency, Chiyoda-ku, Tokyo 102-0075, Japan;

    rnSemiconductor Technology Academic Research Center, Kohoku-ku, Kanagawa 222-0033, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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