Electronic structure and thermoelectric properties of In_(32-x)Ge_xO_(48) (x=0,1, 2, and 3) at low temperature

摘要

The electronic properties of In_(32-x)Ge_xO_(48)(x=0, 1, 2, 3, 4, 5, 6, and 7) are studied by using the density functional theory. The transport coefficients of In_(32-x)Ge_xO_(48)(x=0, 1, 2, and 3) are then calculated within the semiclassical Boltzmann theory. The largest Seebeck coefficient is nearly seven times larger than that of Bi_2Te_3. Most strikingly, the thermoelectric power factor with respect to relaxation time is nearly 70 times larger than that of conventional thermoelectric materials. Our theoretical calculations give a valuable insight on how to enhance the thermoelectric performance of ln_(32-x)Ge_xO_(48).