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首页> 外文期刊>Applied Physics Letters >Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation
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Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation

机译：使用SU-8钝化减少InAs / GaSb应变层长波长超晶格探测器中的表面泄漏电流

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摘要

We report on SU-8 passivation for reducing surface leakage current in type-II InAs/GaSb strained layer superlattice detectors (λ100% _(cut-off) ～ 12 μm). The electrical behavior of SU-8 passivated and unpassivated devices was compared for devices with variable mesa sizes. Dark current was reduced by more than one order of magnitude for the small area (50 μm × 50 μm) passivated diode at 77 K. The surface resistivity, the responsivity and specific detectivity were measured for SU-8 passivated devices and are equal to 204 Ω cm, 0.58 AAV and 3.49 × 10~9 Jones, respectively (77 K).
机译：我们报告了SU-8钝化以减少II型InAs / GaSb应变层超晶格探测器（λ100％_（截止）〜12μm）中的表面泄漏电流。比较了SU-8钝化和未钝化设备的电性能，以了解台面尺寸可变的设备的情况。对于小面积（50μm×50μm）钝化二极管，在77 K下，暗电流减小了一个数量级以上。对于SU-8钝化器件，测量了其表面电阻率，响应率和比探测率，等于204 Ωcm，0.58 AAV和3.49×10〜9 Jones（77 K）。

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  • 来源
    《Applied Physics Letters》 |2010年第14期|p.143512.1-143512.3|共3页
  • 作者

    H. S. Kim; E. Plis; N. Gautam; S. Myers; Y. Sharma; L. R. Dawson; S. Krishna;

  • 作者单位

    Department of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA;

    rnDepartment of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA;

    rnDepartment of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA;

    rnDepartment of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA;

    rnDepartment of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA;

    rnDepartment of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA;

    rnDepartment of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA;

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