Graphene and graphene oxide nanogap electrodes fabricated by atomic force microscopy nanolithography

摘要

Nanogap electrodes have been studied intensively both as ideal research tools for molecular electronics and fundamental building blocks for nanodevices. Here, graphene and graphene oxide nanogap electrodes with gap width below 10 nm were fabricated by atomic force microscopy (AFM) nanolithography. It provides a simple and convenient way to fabricate nanogap electrodes and transfer the nanogap electrodes onto any required substrate. As a preliminary demonstration, organic field-effect transistors and organic photoswitchers based on the nanogap electrodes were fabricated, which all exhibited high performance, indicating the great prospect of the nanogap electrodes and the AFM nanolithography technique for molecular electronics.