Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes

摘要

The single n-ZnO:In/i-ZnO/p-GaN-heterostructured n-i-p nanorod was deposited using a vapor cooling condensation system. The photoelectrochemical system was used to directly passivate the nanorod sidewall surface with a Zn(OH)_2 layer. The electrical performance of the passivated and unpassivated single nanorod was measured using a conductive atomic force microscopy. The resulting nanorod light-emitting diodes were investigated for understanding the relevant light emission mechanisms. Since the nonradiative recombination centers, native defects, and dangling bonds existed on the nanorod sidewall surface were effectively passivated, the resultant surface leakage current was reduced and the near-band emission intensity of the nanorod light-emitting diode was increased accordingly.