Nonspin related giant magnetoresistance ≤600% in hybrid field-effect transistors with ferromagnetic gates

摘要

We demonstrate a nonspin related giant magnetoresistance (600% at 1.6 K) in a hybrid field-effect transistor (FET) with a ferromagnetic gate. The robust response of this "Mag-FET" is obtained by using a gate that induces strong fringing magnetic fields (FMFs) in the FET channel. The large magnetoresistance results from the ability of the FMFs to modulate the electrostatic barrier to transport, induced in the channel by the gate potential. These results suggest a viable strategy to achieve Mag-FET operation at room temperature, and as such could open up approaches to magnetoelectronics.