Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity

摘要

Indium incorporation into strained InGaN coherently grown on a GaN substrate with arbitrary polarity is simulated using a simplified epitaxy model. The InGaN composition is predicted as a function of C-axis inclination angle. Effect of strain originated from the lattice mismatch on optical transitions in the bulk InGaN and quantum wells is examined with account of both complex valence band structure and polarization charges induced at the InGaN/GaN interfaces. A higher indium incorporation oh nonpolar and semipolar planes, as compared to the ordinary C-plane, is found to not necessarily result in a longer emission wavelength.