机译:通过单掺杂注入在纳米级场效应晶体管通道中进行漏极电流调制
School of Physics, University of Melbourne, Victoria 3010, Australia;
rnKavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands;
rnSchool of Physics, University of Melbourne, Victoria 3010, Australia;
rnSchool of Physics, University of Melbourne, Victoria 3010, Australia;
rnSchool of Physics, University of Melbourne, Victoria 3010, Australia;
rnKavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands;
rnKavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands;
rnINAC-SPSMS, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble, France;
LETI-Minatec, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble, France;
rnINAC-SPSMS, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble, France;
rnKavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands;
rnSchool of Physics, University of Melbourne, Victoria 3010, Australia;
机译:由于源极/漏极扩展中的随机掺杂补偿,纳米级大块MOSFET中的漏极电流崩溃
机译:高温磷扩展离子注入改善体硅鳍片场效应晶体管的漏极诱导势垒降低和导通电流特性
机译:埋入沟道p型金属氧化物半导体场效应晶体管的紧凑型热电子感应氧化物陷阱电荷和后应力漏极电流建模
机译:NISI对高性能掺杂剂隔离源/漏电N沟道MOSFET的N-离子注入的NISI选择性相位调制
机译:纳米N沟道和P沟道金属氧化物半导体场效应晶体管的超薄氧化物和氮化物/氧化物堆叠的栅极电介质研究
机译:洛仑兹力对单漏极MOSFET的漏极电流调制用于磁传感应用
机译:通过单掺杂注入在纳米级场效应晶体管通道中进行漏极电流调制